In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 4S ( 2000-04-01), p. 2094-
Kurzfassung:
As one candidate capacitor for dynamic random access memories
(DRAMs) of 4 Gbit and beyond, we investigated the electrical properties of Ru/Ta 2 O 5 /Ru. In this paper, the dielectric
constant of Ta 2 O 5 was measured as a function of annealing
temperature and, also, its dependence on film thickness was studied. The effect of postannealing, which was performed after
forming a capacitor, on the leakage current of Ru/crystalline-Ta 2 O 5 /Ru capacitor was
evaluated. Additionally, the leakage current was investigated as a function of Ta 2 O 5 film thickness. Through these
experiments, a reliable 7 Å Toxeq. of Ta 2 O 5 with a Ru
electrode was obtained, which indicates that the Ru/crystalline-Ta 2 O 5 /Ru capacitor is a promising candidate
for DRAMs of 4 Gbit and beyond.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.2094
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2000
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
