In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 4S ( 2000-04-01), p. 2457-
Abstract:
Area selective epitaxy of GaAs on GaAs substrates masked by SiO 2 has been investigated using migration-enhanced epitaxy (MEE) with 2 s annealing after Ga deposition. By this method, successful area selective epitaxy of GaAs has been achieved at substrate temperatures around 590°C.
We have carried out area selective epitaxy of GaAs on GaAs substrates of various surface indices. Side facets are found to be composed of vertical {110} facets when epitaxial growth is carried out on GaAs (n11)A substrates, and composed of inclined {n20} facets when GaAs (n11)B substrates are used.
It is determined that the growth rates of A- and B-surfaces are the most important factors in the facet index determination.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.2457
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7