In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 5R ( 2000-05-01), p. 2610-
Abstract:
The second-order nonlinear susceptibilities of GaN films on sapphire were determined by the Maker fringe technique. In deriving the second-harmonic intensity, the bound wave propagating from the GaN-air interface to the GaN-sapphire interface and that propagating in the opposite direction were taken into account. We obtained |χ (2) z x x |=14.7±0.2 pm/V, |χ (2) x z x |=14.4±0.2 pm/V and |χ (2) z z z |=29.7±0.7 pm/V for the GaN film with a thickness of 2.55 µm using fundamental light with a wavelength of 1.064 µm.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.2610
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7