In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 6S ( 2000-06-01), p. 3721-
Abstract:
Surface potential distributions on InAs thin films grown on (110) GaAs substrates
were studied by Kelvin probe force microscopy. The topography showed that their surfaces were covered by many terraces.
The surface Fermi levels ( E F S ) were evaluated from the potential images,
and E F S near the terrace edge was higher than that on the terrace top,
while both of them were above the conduction band edge of bulk InAs. These results indicate that the electrons are more concentrated near the terrace edge.
The film thickness dependence of E F S was also studied,
but the quantum confinement effects in the InAs thin films were not confirmed experimentally.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.3721
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7