In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 12A ( 2000-12-01), p. L1219-
Abstract:
GaInNAs/GaAs quantum wells with indium compositions of up to 39% were grown by metalorganic chemical vapor deposition under different growth rates. We found that the growth rate (∼1 µm/h) critically affects the optical quality of GaInNAs/GaAs quantum wells and that a low growth rate (∼0.2 µm/h) is preferable for increasing nitrogen compositions.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.L1219
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7