In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 1A ( 2000-01-01), p. L16-
Abstract:
GaN heteroepitaxial growth on sapphire (0001) substrates was carried out by radio-frequency plasma-assisted
molecular beam epitaxy (rf-MBE). A Ga-polarity growth was achieved by using an AlN high-temperature buffer layer. The epilayer polarity was characterized directly by coaxial impact collision ion scattering spectra (CAICISS). It was
found that the properties of the GaN films showing Ga-face polarity, including their structural and electrical properties, were dramatically improved compared to those of films with N-face polarity. This important conclusion is considered
to be a breakthrough in the realization of high-quality III-nitride films by MBE for device applications.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
