In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 7B ( 2000-07-01), p. L710-
Kurzfassung:
Micro-Raman scattering measurements were performed on bulk wurtzite AlN crystals over a temperature range from 10 K to 1275 K. The temperature dependence of the frequency of the AlN phonons follows an empirical relationship previously introduced for diamond. A temperature-induced frequency shift of the E 2 phonon of -(2.22±0.02)×10 -2 cm -1 /K was determined for high temperatures, which is similar to values reported for bulk GaN. The results provide the basis for the non-invasive monitoring of the temperature of (Al,Ga)N by Raman scattering.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.L710
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2000
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
