In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 7B ( 2000-07-01), p. L757-
Kurzfassung:
We have observed that excess low-field leakage currents generated by 10 keV X-ray irradiation in thin gate oxides (4.5 nm) could be reduced by applying a low gate bias to the oxides after irradiation, regardless of the polarity of the applied gate bias. The reduction rate of radiation-induced leakage current (RILC) increased with the applied gate bias and began to saturate after 10 5 s. In addition, the reduction rate of RILC was significantly enhanced in a H 2 ambient, suggesting a strong link between the reduction of RILC and trapped-hole annealing.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.L757
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2000
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
