In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 2A ( 2000-02-01), p. L82-
Abstract:
A novel multi-stacked Ti/TiN structure was proposed to enhance the
barrier properties of chemical vapor deposited TiN film. Both the chlorine content and the resistivity of the multi-stacked Ti/TiN films are
significantly decreased when compared with a single layer of chemical vapor deposited (CVD) TiN film
with the same thickness. Secondary ion mass spectrometry (SIMS) data showed that Ti atom distribution is fairly uniform to fill the grain boundary
of TiN film. Therefore, the leakage current resulted from junction spiking was further reduced by the grain boundary effects when employing multi-stacked
Ti/TiN as diffusion barrier layer instead of a single layer of TiN film.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
