In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 9A ( 2000-09-01), p. L917-
Abstract:
We have developed a phenomenological theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov (SK) islands and misfit-dislocations (MDs). Our theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Moreover, we also formulate a procedure for determining the phenomenological parameters that includes atomistic calculations. The critical thickness of InAs/GaAs(110) obtained by this procedure is in good agreement with the experimentally obtained value.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.L917
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
