In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 10A ( 2000-10-01), p. L958-
Abstract:
Three-dimensional stress distributions for two different samples of epitaxial laterally-overgrown GaN deposited on SiO 2 masks were simulated by continuum elasticity theory using the finite-element method. The samples have patterned masks in the (1100) and (1120) orientations, respectively. The results of the simulation compared quantitatively quite well with the stress distributions derived from micro-Raman measurements. This success depended on taking into account the existence of a string of voids in the samples that could be seen in the transmission electron microscope image. From the buffer layer towards the sample surface, the biaxial stress relaxes within a relatively short distance to a value that corresponds to a biaxially compressed film. This value persists until a short distance from the sample surface.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.L958
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7