In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 5R ( 2001-05-01), p. 3157-
Kurzfassung:
The band-gap energy and band-gap bowing parameter of the wurtzite InGaN alloys are investigated numerically with the CASTEP simulation program. The simulation results suggest that the unstrained band-gap bowing parameter for the wurtzite InGaN alloys is b =1.21±0.03 eV. The simulation results also show that the width of the In x Ga 1- x N top valence band at the Γ point decreases when the indium composition increases and has a value of 7.331 eV for the GaN ( x =0) and 6.972 eV for the In 0.375 Ga 0.625 N ( x =0.375).
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.3157
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2001
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7