In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 2R ( 2001-02-01), p. 467-
Abstract:
In this study, we demonstrate a highly strained 1.2 µm GaInAs/GaAs quantum well laser which may be used in high-speed local area networks. Edge emitting lasers with either a GaInP or AlGaAs cladding layer have been fabricated. We have achieved a threshold current density as low as 170 A/cm 2 for GaInP-cladding-layer lasers and a high characteristic temperature T 0 as high as 211 K from 30°C to 120°C for AlGaAs-cladding-layer lasers. The material gain coefficient g 0 was estimated to be 1550 cm -1 which is comparable to that of 0.98 µm GaInAs lasers. A preliminary lifetime test under heatsink-free CW condition was carried out, which shows no notable degradation after 300 h. We also demonstrated an AlAs oxide confinement laser in a 1.2 µm wavelength band.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7