In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 8R ( 2001-08-01), p. 4979-
Kurzfassung:
Effects of ozone treatment and charged defects on retention characteristics of Ir/IrO 2 /Pb(Zr, Ti)O 3 (PZT)/Pt/IrO 2 /Ir capacitors were systematically investigated. For these purposes, PZT thin films were exposed to ozone environment to promote enhanced surface oxidation. After baking the Ir/IrO 2 /PZT/Pt/IrO 2 /Ir capacitors at 125°C for 500 h, degradation of Q nv (non-volatile charge) value of the ozone-treated capacitors was approximately 17.6%, that is less than one fifth of that of the untreated capacitors. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) studies showed that the amount of oxygen-vacancies near the PZT surface was dramatically decreased by the ozone treatment. The Schottky barrier height of the ozone-treated capacitors increased when compared to that of the untreated capacitors (the Schottky barrier height of the untreated and the ozone-treated capacitor was 0.29 eV and 0.43 eV, respectively). Therefore, one can conclude that the retention characteristics seem to be closely associated with oxygen related defects near the ferroelectric/electrode interface and the control of the interface properties of PZT thin film is a key technology to pursue reliable function characteristics of ferroelectric random access memory (FRAM) devices.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.4979
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2001
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
