In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 10R ( 2001-10-01), p. 5889-
Abstract:
In the paper, a thin tensile GaAs interlayer was used to get regular arrangement of InAs quantum dots (QDs) on InP substrate by low pressure metal-organic chemical vapor deposition (LP-MOCVD). The characterizations of the InAs QDs have been investigated by Photoluminescence (PL) spectrum, atomic force microscopy (AFM) image and Raman spectrum. The theoretical calculations have been performed. The conclusions coincide with our experiment results well.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.5889
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7