In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 10R ( 2001-10-01), p. 6055-
Kurzfassung:
We evaluate the quantum yield of SiO 2 decomposition caused by electron-beam irradiation from the tip apex of a scanning tunneling microscope over an electron energy range of 10–180 eV and find onsets at 40 and 120 eV. These onsets are close to those found previously for electron-beam induced SiO 2 dissociation by Auger electron spectroscopy and electron stimulated desorption. Based on the excitation function, we consider that the decomposition is activated by core level excitations like the Knotek–Feibelman mechanism.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.6055
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2001
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
