In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 12R ( 2001-12-01), p. 6956-
Abstract:
C -axis-oriented Ru thin films were deposited on glass substrates by sputtering a Ru target in Ar and O 2 gas mixture with O 2 flow ratios which were lower than that required for RuO 2 formation. A minimum value of 3.5° was obtained for the full-width at half maximum (FWHM) of the rocking curve of a Ru (002) peak for the Ru film deposited at a substrate temperature of 500°C and O 2 flow ratio of 4%. The c -axis-oriented Ru films were observed to be formed from the initial stage of crystal growth and became continuous even at a film thickness of 3 nm. Two-dimensional crystal growth of the single-axis-oriented Ru films was suggested.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.6956
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7