In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 10A ( 2001-10-01), p. L1040-
Abstract:
Ga 2 O 3 (1 wt%)-doped ZnO (GZO) thin films were deposited on α-Al 2 O 3 (0001) by rf magnetron sputtering at 550°C and a polycrystalline structure was obtained. As-grown GZO thin films show poor electrical properties and photoluminescence (PL). For the improvement of these properties, GZO thin films were annealed at 800–900°C in N 2 atmosphere for 3 min. After rapid thermal annealing, deep-defect-level emission disappears and near-band emission is greatly enhanced. Annealed GZO thin films show very low resistivity of 2.6×10 -4 Ω·cm with 3.9×10 20 /cm 3 carrier concentration and exceptionally high mobility of 60 cm 2 /V·s. These improved physical properties are explained in terms of the translation of doped-Ga atoms from interstitial to substitutional sites.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.L1040
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7