In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 3A ( 2001-03-01), p. L198-
Kurzfassung:
This is the first report on wet gate recess etching for the fabrication of an Al 0.2 Ga 0.8 N/GaN heterojunction field effect transistors. Wet recess etching was performed using a photoresist etching mask without any additional dielectrics or metals. The recess-etched surface was smooth and had no etch pits. After recess etching of a 300-Å-thick n + -GaN cap layer, Schottky contact metals of Pt/Au were deposited on Al 0.2 Ga 0.8 N. Gate-to-drain breakdown voltage and gate leakage current at V GD = -20 V were -80 V and -34 µA, respectively. The fabricated device exhibited a maximum drain current of 193 mA/mm and a maximum extrinsic transconductance of 62 mS/mm.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.L198
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2001
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7