In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 7A ( 2001-07-01), p. L657-
Kurzfassung:
Zinc oxide (ZnO) of high quality was homoepitaxially grown by metal-organic vapor phase epitaxy (MOVPE) on molecular beam epitaxy (MBE)-grown ZnO layers after the pretreatment of the underlying MBE-ZnO at 1000°C in N 2 which resulted in an atomically flat surface. In photoluminescence at 15 K, the 3 meV line width of the emission from donor-bound-excitons (D 0 X) and the observation of the fourth phonon replica of the emission from free-excitons (EX) have demonstrated the high potential of MOVPE growth of ZnO toward optical applications.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.L657
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2001
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7