In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 2A ( 2001-02-01), p. L89-
Abstract:
Using selective epitaxial growth, we fabricated an active resistor in the floated electron channel field effect transistor(FECFET) structure. Compared to the active resistor in the metal semiconductor FET(MESFET) structure, it has large sheet resistance, depending on the number of stripes and etching time. For two SiO 2 stripes, it is 600 Ω/w=50 µm and for twenty SiO 2 stripes, its sheet resistance can reach 6000 Ω/\Box. Under light illumination, its current increases nonlinearly with the input light power like two-terminal FET without a gate.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7