In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 43, No. 4S ( 2004-04-01), p. 1837-
Abstract:
In this paper, the effects of boron and fluorine in the SiO 2 /Si interface region with the optimized nitrogen profile are described. Fluorine in the interface region has been found to terminate the interface states and improve negative bias temperature instability (NBTI). However, fluorine enhances the boron penetration. The ideal nitrogen profile has been achieved in order to suppress NBTI characteristics by applying the SiN/SiO 2 stack structure.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.43.1837
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2004
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7