In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 43, No. 9S ( 2004-09-01), p. 6530-
Abstract:
SrZrO 3 /SrTiO 3 (SZO/STO) artificial superlattices were fabricated on STO substrates by the molecular beam epitaxy. The structures of the superlattices were analyzed by reflection high-energy electron diffraction, normal θ-2θ scan mode X-ray diffraction analyses and reciprocal space mapping measurement. Their lattice parameters showed that the lattice distortion is dependent on stacking periodicity and is maximum in the [(SZO) 10 /(STO) 10 ] 4 superlattice. The dielectric properties were measured using interdigital electrodes at frequencies up to 110 MHz, and dielectric relaxation was observed in the [(SZO) 1 /(STO) 1 ] 40 and [(SZO) 10 /(STO) 10 ] 4 superlattices in the low-frequency domain. The dielectric permittivities of all superlattices with interdigital electrodes were more than 10,000 at 110 MHz. The charge vs voltage ( Q - V ) measurement revealed that the SZO/STO superlattices show distinct hysteresis curves, which indicated that ferroelectricity is induced by the superlattices. The origin of the ferroelectricity seems to be related to the anisotropic lattice distortion incorporated into the superlattice structure.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.43.6530
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2004
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7