In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 4R ( 2005-04-01), p. 1698-
Abstract:
In this study, we investigate effects of various buffer layers on the electrical properties of HfO 2 metal–insulator–semiconductor (MIS) structures under fixed conditions for HfO 2 deposition and postdeposition annealing. The buffer layers are prepared using several processes including oxidation, oxynitridation and nitridation. The equivalent oxide thickness (EOT), the flat-band voltage and the flat-band voltage hysteresis of the HfO 2 MIS structures depend on the nitrogen density per unit area in oxynitride buffer layers. We reveal that the increase of EOT due to postdeposition annealing is suppressed by a certain amount of nitrogen density in oxynitride buffer layers. Based on the results, we propose an engineering methodology for the nitrogen composition and the physical thickness of the oxynitride buffer layers so as to obtain a high-performance MIS field-effect transistors.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.44.1698
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2005
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7