In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 4S ( 2005-04-01), p. 2252-
Kurzfassung:
In this paper, the effects of fluorine into HfO 2 interface region by a low-temperature process are described. The new process for incorporating fluorine in the interface region has been optimized, and it has been found that fluorine terminates the interface defect. As a consequence, an ideal interface has been realized, which improves the negative bias temperature instability (NBTI) in metal gate electrode devices fabricated by the low-temperature process.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.44.2252
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2005
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
