In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 4S ( 2005-04-01), p. 2267-
Abstract:
Fully silicided platinum gates have been proposed as metal gate electrodes for scaled complementary metal oxide semiconductor field-effect transistors (CMOSFETs). The Pt monosilicide (PtSi) phase was formed on gate dielectrics by a full silicidation reaction at 400°C. PtSi gate electrodes on SiO 2 possess a high effective work function of 4.9 eV, which could be used as a possible metal gate electrode for p-MOSFETs, while at the PtSi/HfO 2 interface, Fermi-level pinning is observed independent of the PtSi fabrication process. The Fermi-level pinning at the PtSi/HfO 2 interface is comparable to that at the poly-Si/HfO 2 interface, and Fermi-level pinning does not occur at the Pt/HfO 2 interface. These results show that Fermi-level pinning is induced by the presence of silicon atoms at the HfO 2 upper interface.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.44.2267
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2005
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7