In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 45, No. 10R ( 2006-10-01), p. 7901-
Abstract:
The secondary electron emission coefficient (γ) and sputtering yield of the MgAl 2 O 4 /MgO protective layer has been investigated using γ-focused ion beam (γ-FIB) and focused ion beam (FIB) systems, respectively. The MgAl 2 O 4 /MgO protective layer has higher γ values (from 0.09 to 0.12) than the single MgAl 2 O 4 protective layer (from 0.06 to 0.07) at Ne + ion energies ranging from 90 to 200 eV. Also it has been found that the secondary electron emission coefficient (γ) of the MgAl 2 O 4 /MgO protective layer is similar to that of the MgO protective layer. Moreover, the MgAl 2 O 4 /MgO protective layer has been found to have lower sputtering yields (from 0.25 to 0.35) than the MgO protective layer (from 0.36 to 0.44) for Ga + ion energies ranging from 10 to 14 keV.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.45.7901
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2006
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7