In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 49, No. 2R ( 2010-02-01), p. 020201-
Kurzfassung:
A pyramidal pattern was produced on a c -plane sapphire substrate by a mask-free etching process. Photoluminescence (PL) results show that a GaN-based light-emitting diode (LED) epilayer grown on the pyramidally patterned sapphire substrate has higher epitaxial quality than that grown on a standard flat c -plane sapphire substrate. When the input current is 350 mA, the average light output power of LED chips on the pyramidally patterned sapphire substrate is 37% larger than that of LED chips on a standard c -plane sapphire substrate.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.49.020201
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2010
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7