In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 49, No. 4S ( 2010-04-01), p. 04DN06-
Kurzfassung:
The series resistance R sd and the electron and hole mobilities, extracted from n- and p-type Si-nanowire field effect transitors (Si-NWFETs) using the Y -function technique are compared. Both n- and p-NWFETs show similar R sd values but n-NWFETs have larger R sd variation from device to device than p-NWFETs. Also, compared with n-NWFETs, p-NWFETs exhibit higher low-field mobility µ 0 but severe mobility degradation, regardless of channel length in the high gate voltage V gs region. With decreasing channel length and increasing lateral electric field for a given drain voltage, n-NWFETs exhibit low-field mobility (µ 0 ) degradation resulting from the velocity saturation. In contrast, the hole mobility in p-NWFETs remains nearly constant and is consistant with its larger critical electric field, E c .
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.49.04DN06
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2010
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
