In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 49, No. 10R ( 2010-10-01), p. 104301-
Abstract:
We present a numerical simulation and physical analysis of how a single dopant in the channel region effects the variation of threshold voltage Δ V th in highly scaled (gate length = 16 nm) and undoped double-gate fin field effect transistors. The presence of a single contaminant dopant in an undoped channel with an abrupt source/drain (S/D) doping gradient can cause a severe change in Δ V th (140 mV owing to a single acceptor; 100 mV owing to a single donor). To effectively suppress this severe variation, we suggest S/D doping gradient engineering to make the lateral straggle of S/D doping (σ S/D ) larger than 2 nm to minimize Δ V th . The distribution of V th is also estimated by three-dimensional simulation using the position of the dopant.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.49.104301
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2010
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7