In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 3R ( 2011-03-01), p. 036503-
Abstract:
In this paper, we present a simple novel process for forming a robust and reliable oxynitride dielectric with a high nitrogen content. It is highly suitable for n-channel metal–oxide–semiconductor field-effect transistor (nMOSFETs) and polycrystalline silicon–oxide–hafnium oxide–oxide–silicon (SOHOS)-type memory applications. The proposed approach is realized by using chemical oxide with ammonia (NH 3 ) nitridation followed by reoxidation with oxygen (O 2 ). The novel oxynitride process is not only compatible with the standard complementary metal–oxide–semiconductor (CMOS) process, but also can ensure the improvement of flash memory with low-cost manufacturing. The characteristics of nMOSFETs and SOHOS-type nonvolatile memories (NVMs) with a robust oxynitride as a gate oxide or tunnel oxide are studied to demonstrate their advantages such as the retardation of the stress-induced trap generation during constant-voltage stress (CVS), the program/erase behaviors, cycling endurance, and data retention. The results indicate that the proposed robust oxynitride is suitable for future nonvolatile flash memory technology application.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.50.036503
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2011
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
