In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 4S ( 2011-04-01), p. 04DD02-
Abstract:
In this paper, the electrical characteristics and reliability of ZrO 2 -based metal–insulator–metal (MIM) capacitors are investigated. High capacitance density of 15.3 fF/µm 2 was achieved for ZrO 2 MIM capacitors, which is acceptable for the reported MIM capacitors. Schottky emission at the low field region is not a dominant mechanism, and Frenkel–Poole emission is the dominant mechanism at the high electric field region. The extracted dynamic constant and trap energy level were 4.013 and 0.963 eV, respectively. The reduced trap energy level with increasing electric field is due to a rise in the field-induced barrier-lowering effect. The variation of α as a function of stress time under constant voltage stress (CVS) gradually decreases, while the variation of Δ C stress / C 0 under CVS increases because the generation of new dipoles in the high-κ dielectric under CVS may cause charge trapping in the high-κ dielectric.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.50.04DD02
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2011
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7