In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 6S ( 2011-06-01), p. 06GF16-
Abstract:
Simplified models of capacitance and resistance in the external region are presented and the mobility enhancement effect is verified for extremely scaled and undoped double-gate metal–oxide–semiconductor field-effect transistors (MOSFETs) with the raised source/drain and self-aligned silicide structure and different source/drain doping gradients. The accuracy and universality of these models were confirmed using a two-dimensional simulator. Results indicated that a 3 nm increment of the source/drain lateral doping straggle can reduce the intrinsic delay by about 30% and the leakage current by about 95%.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.50.06GF16
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2011
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7