In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 10S ( 2011-10-01), p. 10PB02-
Abstract:
The impact of nitrogen incorporation into HfO 2 /SiO 2 gate dielectrics in the gate-stack fabrication process on the low-frequency noise of the drain current of polycrystalline silicon (poly-Si)/TiN (10 nm)/HfO 2 /SiO 2 gate-stack metal–oxide–semiconductor field-effect transistors (MOSFETs) is studied, considering the scaling of an equivalent oxide thickness with the reduction in interfacial layer SiO 2 thickness and the plasma nitriding of gate dielectrics. The nitriding combined with nitrogen plasma and nitrogen diffusion from a 10-nm-thick TiN layer increases the normalized noise power spectral density owing to carrier mobility fluctuation, and decreases the slope γ of the 1/ f γ noise spectrum owing to the increase in the number of trapped carriers at the bulk trap site in the gate dielectric layer. The reduction in SiO 2 thickness from 1.5 to 0.8 nm showed less impact on the mentioned phenomena with TiN. These results suggest that nitrogen incorporation into HfO 2 /SiO 2 gate dielectrics in the device fabrication process for poly-Si/metal nitride/HfO 2 /SiO 2 gate stacks requires careful attention to suppress the power density of low-frequency noise.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.50.10PB02
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2011
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7