In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 11R ( 2011-11-01), p. 110210-
Kurzfassung:
In this paper, we numerically investigate the additional-body effects (ABEs) created by the isolation-last fabrication process of a self-aligned deca-nanometer ultrathin-body and buried oxide (UTBB) silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistor (MOSFET). The reasons for the device's new electrical characteristics are also explained in detail. The additional silicon body volumes of the UTBB SOI MOSFET are found to improve the subthreshold swing and the on/off current ratio. The additional body has a negative effect, however, upon both the gate leakage current and the total gate capacitance, when compared with a standard UTBB SOI MOSFET.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.50.110210
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2011
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
