In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 51, No. 10R ( 2012-10-01), p. 101101-
Abstract:
TiO 2 -based resistive switching memory devices with an inserted ZnO layer were fabricated, and the effect of inserting a ZnO layer between the TiO 2 and bottom electrode on the reliability characteristics of TiO 2 -based memory devices was investigated. The improved endurance and retention performances were achieved in the TiO 2 -based memory device fabricated with an inserted ZnO layer. The mechanism of reliability improvement was discussed. The inserted ZnO layer is proposed to adjust the distribution of oxygen vacancies across the TiO 2 layer due to the lower formation energy of oxygen vacancy in ZnO, which may be responsible for the improved reliability characteristics in the TiO 2 -based memory device with an inserted ZnO layer.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.51.101101
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2012
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7