In:
ECS Transactions, The Electrochemical Society, Vol. 58, No. 7 ( 2013-08-31), p. 299-302
Kurzfassung:
In this study, we explored the threshold voltage instability behavior in amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT). A tow-step electrical degradation behavior of α-IGZO TFT was found under gate-bias stress. A usual small positive shift followed by a special negative shift of threshold voltage is characterized in the α-IGZO TFT. We suggest that the positive shift of the threshold voltage is because of charge trapping in the gate dielectric and/or at the channel/dielectric interface, while the negative shift of threshold voltage may be attributed to electric field induced extra electron carriers from H 2 O molecules in the back channel protective layer.
Materialart:
Online-Ressource
ISSN:
1938-5862
,
1938-6737
DOI:
10.1149/05807.0299ecst
Sprache:
Unbekannt
Verlag:
The Electrochemical Society
Publikationsdatum:
2013