In:
ECS Transactions, The Electrochemical Society, Vol. 61, No. 2 ( 2014-03-24), p. 293-300
Kurzfassung:
In this paper we studied characteristics of the Pt/Al 2 O 3 /(Ta/Nb)O x / Al 2 O 3 /SiO 2 /p-Si capacitors, fabricated by using atomic layer deposition at 200 °C. Note that a large flatband voltage shift (ΔV fb ) value of more than 8 V appears after programming at 1 mC/cm 2 because large amount of charge is trapped in the Al 2 O 3 /(Ta/Nb)O x /Al 2 O 3 structure. The ΔV fb which occurred after programming decreases with increasing retention time under bias voltage at -5 MV/cm. We found that the electron detrapping occurs easily across the tunneling layer rather than the blocking layer.
Materialart:
Online-Ressource
ISSN:
1938-5862
,
1938-6737
DOI:
10.1149/06102.0293ecst
Sprache:
Unbekannt
Verlag:
The Electrochemical Society
Publikationsdatum:
2014