In:
ECS Transactions, The Electrochemical Society, Vol. 75, No. 8 ( 2016-08-18), p. 447-459
Abstract:
Silicon-germanium (SiGe) and germanium (Ge) have been investigated as high-mobility channel materials for high-performance metal-oxide-semiconductor field-effect transistors (MOSFETs). The intense development of heterogeneous integration of SiGe and Ge on Si has given us opportunities to extend functionalities of photonic integrated circuits based on Si photonics technologies. We have investigated strain engineering by SiGe for enhancing modulation efficiency in Si optical modulators. By using the light hole effective mass in strained SiGe, we have demonstrated the enhanced plasma dispersion effect in SiGe. In addition to low-dark-current Ge photodetectors with GeO 2 passivation, we have proposed Ge CMOS photonics for mid-infrared integrated photonics platform. We have successfully demonstrated Ge passive waveguide devices as well as carrier-injection variable optical attenuator operated at a 2-µm wavelength on Ge-on-Insulator wafer.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
DOI:
10.1149/07508.0447ecst
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2016
