In:
ECS Transactions, The Electrochemical Society, Vol. 75, No. 12 ( 2016-08-23), p. 123-129
Abstract:
The uniformity of SiO 2 film thermally grown on 4H-SiC was characterized by atomic force microscopic observation of the emerged SiO 2 surface after each step-etching using diluted HF solution. It was found that roughness of the emerged SiO 2 surface drastically increases near the SiO 2 /SiC interface. This means that the film quality near the interface is not two-dimensionally uniform. We described the two-dimensionally non-uniform. On the other hand, the amount of roughness increase at the middle region was small, indicating the middle region is uniform film. These results indicate that the region is two-dimensionally uniform. These results indicate that the oxide film contains non-uniformly when just after being formed, and then the two-dimensional film uniformity is gradually improved during subsequent oxidation. Density profiles of SiO 2 films were also characterized. The uniformity improvement was discussed in terms of impurity desorption and film density.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
DOI:
10.1149/07512.0123ecst
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2016
