In:
ECS Transactions, The Electrochemical Society, Vol. 1, No. 5 ( 2006-07-07), p. 257-266
Abstract:
The influence of an in-situ formed SiNx layer at the interface between a Si substrate and atomic-layer-deposited high-k HfO2 film on the structural stability and electrical performance was investigated. It was found that the densely formed SiNx layer strongly reduces the degradation in capacitance density and interface trap properties during post-deposition annealing up to 1000oC. This is mostly due to a reduced SiO2 formation at the HfO2/SiNx interface during post-annealing. Hf-silicate is mostly formed on the surface region of the film during post- annealing which is also reduced by the SiNx layer.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2006
