In:
ECS Transactions, The Electrochemical Society, Vol. 1, No. 5 ( 2006-07-07), p. 287-294
Abstract:
We investigated the process window of partially silicided (PASI) Pt gate electrodes which can effectively suppress unintentional threshold voltage increases of Hf-based high-k p- MOSFETs, and the impact of application of the PASI Pt (PASI- PtSi) gate electrode on their electrical properties. The values of the EOT, flat-band voltage, and the gate leakage current density of the HfOx(N) p-MOS capacitors with the PASI- PtSi gate electrodes are almost identical when the Pt film is more than double the thickness of the poly-Si films at silicidation temperatures from 400 to 600ºC. No degradation in the gate leakage current density of the HfOx(N) MOS capacitors with the PASI-PtSi gate electrodes was observed, compared with the FUSI-NiSi and FUSI-PtSi gate electrodes. Consequently, it is concluded that the PASI technology is useful in scaled CMOS devices with Hf-based high-k dielectrics.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2006