In:
ECS Transactions, The Electrochemical Society, Vol. 3, No. 7 ( 2006-10-20), p. 245-248
Abstract:
A thin layer of Si seed was employed to help nucleate low- temperature selective SiGe epitaxial film in recessed source and drain areas. In combination with pre-epi wet clean and low- temperature chemical bake, use of Si seed resulted in improved SiGe film morphology and micro-loading effect, and further improved dislocation on the lateral recessed interface.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2006
