In:
ECS Transactions, The Electrochemical Society, Vol. 3, No. 7 ( 2006-10-20), p. 841-847
Abstract:
Si/SiGe selective epitaxial growth is becoming a critical process step for ULSI fabrication on 65nm and beyond technologies with need for elevated source-drain or strained Si channel to enhance device performance. This paper reviews recent efforts to improve batch-type epitaxial reactors for high-volume device fabrication and shows recent progress in low-temperature Si/SiGe selective epi process.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2006