In:
ECS Transactions, The Electrochemical Society, Vol. 3, No. 7 ( 2006-10-20), p. 861-866
Kurzfassung:
B atomic layer formation on Si 1-x Ge x (100) (x=0, 0.3, 1) using BCl 3 gas has been investigated by ultraclean low-pressure chemical vapor deposition. At 450ºC, in the case using BCl 3 -He-H 2 gas mixture, B amount tends to increase beyond one atomic layer (6.8x1014 cm -2 ) with increasing BCl 3 exposure time on Si 0.7 Ge 0.3 (100) and Ge(100). On the other hand, in the case using BCl 3 -He-Ar mixture gas, 1/3-1/2 atomic layer (2.3x1014 cm -2 ) formation is achieved self-limitedly with high Cl coverage on the surface. The Cl atoms on the B adsorbed Si 1-x Ge x (100) are effectively removed by H 2 introduction at 450ºC after BCl 3 exposure. In this way, atomically-controlled B atomic layer formation on Si 1-x Ge x /Si(100) was demonstrated by using the self-limited surface reaction of BCl 3 at 450ºC.
Materialart:
Online-Ressource
ISSN:
1938-5862
,
1938-6737
Sprache:
Unbekannt
Verlag:
The Electrochemical Society
Publikationsdatum:
2006