In:
ECS Transactions, The Electrochemical Society, Vol. 19, No. 1 ( 2009-05-15), p. 41-47
Abstract:
The temperature influence on memory functions of the nanocrystalline ZnO embedded Zr-doped HfO2 high-k capacitor was investigated. Both the memory window and the trapped charge density increased with the increase of temperature. The temperature effect on hole trapping was observed at 125åC but not at 25åC or 75åC. The temperature effect on electron trapping was obvious above 25åC. The interface quality is greatly influenced by the temperature, which was detected on the C-V, G-V, and I-V curves. The sample temperature affects the carrier generation and transport mechanisms, which are responsible for the memory function changes.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2009