In:
ECS Transactions, The Electrochemical Society, Vol. 19, No. 3 ( 2009-05-15), p. 403-410
Kurzfassung:
The formation of step bunching was observed by atomic force microscopy on n-type Si(111) surfaces during the electrodeposition of noble metals under semiconductor depletion conditions. The surface chemical analysis performed by synchrotron radiation photoelectron spectroscopy (SRPES) indicates the formation of an ultra-thin oxide film along with the topological transformation. Step bunching is interpreted in terms of site-specific etching controlled by the reactivity of kink sites and step edges together with the surface accumulation of holes supplied by the reduction of Pt-chloride complexes via the valence band.
Materialart:
Online-Ressource
ISSN:
1938-5862
,
1938-6737
Sprache:
Unbekannt
Verlag:
The Electrochemical Society
Publikationsdatum:
2009
