In:
ECS Transactions, The Electrochemical Society, Vol. 41, No. 3 ( 2011-10-04), p. 249-253
Kurzfassung:
We investigated the device structure and fabrication process of In0.7Ga0.3As tunneling field-effect-transistors (TFETs) with atomic-layer-deposited (ALD) high-k dielectrics. We compared the device performance of In0.7Ga0.3As TFETs with p++/i and p++/n+ tunneling junctions. TFETs with p++/n+ tunneling junction exhibit higher drive current and lower subthreshold swing than devices with p++/i junction. Device characteristics of InGaAs TFETs with different high-k dielectrics LaAlO3 and ZrO2 have also been studied. In0.7Ga0.3As TFETs with ZrO2 (EOT~0.8 nm) exhibit subthreshold swing of 80mV/dec and drive current of 44 mA/mm (at Vg-Vth=2 V).
Materialart:
Online-Ressource
ISSN:
1938-5862
,
1938-6737
Sprache:
Unbekannt
Verlag:
The Electrochemical Society
Publikationsdatum:
2011
