In:
ECS Transactions, The Electrochemical Society, Vol. 44, No. 1 ( 2012-03-16), p. 105-114
Abstract:
A novel structure PIN switch diode which is integrated into SiGe HBT BiCMOS process was reported in this paper reports. In this PIN device, an n-type pseudo buried layer (PBL) under STI is adopted as N region and the heavily doped extrinsic base of SiGe NPN HBT is used as P region. The pseudo buried layer is picked up by a deep contact through field oxide. An extra implantation (PIN implantation) is induced into I region. Key parameters such as the size of active area, space from PBL to active area and energy & dose of PIN implant are obtained by simulation for PIN performance optimization. The demonstrated performance of this PIN diode exhibits an insertion loss as -0.56dB & an isolation loss as -22.26dB under 2.4Ghz frequency, and the BV can achieve 19V, which meets the requirement of PIN diode applied as switch in WiFi.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2012
