In:
ECS Journal of Solid State Science and Technology, The Electrochemical Society, Vol. 10, No. 6 ( 2021-06-01), p. 065003-
Abstract:
This study aimed to improve the performance of RRAM cell with switching layer of ZnGa 2 O 4 . We used radio frequency magnetron sputtering system to insert two layers of gallium-related oxide materials, Al 0.05 Ga 0.95 O and In 0.9 Ga 0.1 O, into the resistance-switching layer. The on/off ratio can be increased from 10 1 to 10 2 by inserting Al 0.05 Ga 0.95 O layer. Moreover, with the aids of In 0.9 Ga 0.1 O layer, reset voltage of the RRAM device can be reduced to −0.7 V. The heterostructure effectively increases the on/off ratio and lowers the working voltage of the device, which not only improves the memory characteristics but also decreases the power consumption. In addition, the heterojunction memory can switch between high- and low-resistance states more than 100 times and keep stable at each state for 10000 s at room temperature.
Type of Medium:
Online Resource
ISSN:
2162-8769
,
2162-8777
DOI:
10.1149/2162-8777/ac04fd
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2021